Emerging new properties at oxide interfaces

ScienceDaily (Nov. 25, 2011) — Dr. Ariando of the National University of Singapore discovered a collective electronic state not seen before in the bulk of either two individual insulating oxides, thus demonstrating that electrons at their interface can now exhibit ferromagnetism.

In many ionic materials, including the oxides, surfaces created along specific directions can become electrically charged. By the same token, such electronic charging, or 'polarisation', can also occur at the interface of two connecting materials.

Theoretically, this could lead to the build-up of an ever increasing voltage in the materials in certain systems, a situation known as a 'polarity catastrophe'. Certainly this cannot occur in practical systems, for energy sake, and Nature deals with this situation by reconstructing the electronic configuration of the interface via a shifting of charges across the interface, or by structural reconstructions, namely, the displacement of atoms.

With oxide materials, a unique consequence of these reconstructions is that it provides a means to create novel electronic phases, stabilised by the interface, and which cannot exist in the bulk.

Dr. Ariando from the National University of Singapore's (NUS) Department of Physics and NUS Nanoscience and Nanotechnology-NanoCore, along with his co-workers, showed that at this interface, a remarkable combination of strong diamagnetism (superconductor like), paramagnetism and ferromagnetism can co-exist with the quasi two-dimensional electron gas when prepared under a more oxidising condition.

Past studies had shown that two-dimensional conducting planes, in the form of quasi two-dimensional electron gas, could emerge between otherwise non-magnetic insulating oxide, Lanthanum Alumniate (LaAlO3) and Strontium Titanate (SrTiO3).

Interestingly, Dr. Ariando's team had also shown that the ferromagnetic phase was stable even above room temperature and the diamagnetism below a relatively high temperature of 60 K.

Industrial applications

The results also indicate that the free surface of SrTiO3 could well be responsible for all these fascinating phenomena. The SrTiO3 resembles Silicon. This will have a significant impact on industry since Silicon has been used in semiconductor technology -- silicon has been the workhorse for oxide-based devices and electronics.

These multiple electronic and magnetic phases at oxide interfaces could yield interesting technological applications. That a variety of magnetic states can be produced close to the surface (< 10 nm) by changing the external stimulus to the SrTiO3 or the interface of LaAlO3/SrTiO3, be it change in oxygen pressure or magnetic field, thus proves that this is a very active interface, and that it can yield strong responses to external stimuli.

One could well consider building novel sensors out of these interfaces that could be used as, say, oxygen sensors, or even magnetic sensors. Still, where these applications are concerned, there is a need to further understand these phenomena and optimise the device configuration.

The research of Dr. Ariando and his co-workers in the oxide interface field is reminiscent of the times when two-dimensional electron gas in the semiconductor heterostructures first became available, and the quantum Hall effect and fractional quantum Hall effect were discovered, both resulting in Nobel prizes.

The physics of the oxide material systems is however richer, involving much stronger interaction between the electrons, mutually and within the crystal lattice. There is great interest in exploring these interfaces in the quest for new nano-electronic devices.

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The above story is reprinted from materials provided by National University of Singapore, via AlphaGalileo.

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Journal Reference:

Ariando, X. Wang, G. Baskaran, Z. Q. Liu, J. Huijben, J. B. Yi, A. Annadi, A. Roy Barman, A. Rusydi, S. Dhar, Y. P. Feng, J. Ding, H. Hilgenkamp, T. Venkatesan. Electronic phase separation at the LaAlO3/SrTiO3 interface. Nature Communications, 2011; 2: 188 DOI: 10.1038/ncomms1192

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Unexpected adhesion properties of graphene may lead to new nanotechnology devices

ScienceDaily (Aug. 24, 2011) — Graphene, considered the most exciting new material under study in the world of nanotechnology, just got even more interesting, according to a new study by a group of researchers at the University of Colorado Boulder.

The new findings -- that graphene has surprisingly powerful adhesion qualities -- are expected to help guide the development of graphene manufacturing and of graphene-based mechanical devices such as resonators and gas separation membranes, according to the CU-Boulder team. The experiments showed that the extreme flexibility of graphene allows it to conform to the topography of even the smoothest substrates.

Graphene consists of a single layer of carbon atoms chemically bonded in a hexagonal chicken wire lattice. Its unique atomic structure could some day replace silicon as the basis of electronic devices and integrated circuits because of its remarkable electrical, mechanical and thermal properties, said Assistant Professor Scott Bunch of the CU-Boulder mechanical engineering department and lead study author.

A paper on the subject was published online in the Aug. 14 issue of Nature Nanotechnology. Co-authors on the study included CU-Boulder graduate students Steven Koenig and NarasimhaBoddeti and Professor Martin Dunn of the mechanical engineering department.

"The real excitement for me is the possibility of creating new applications that exploit the remarkable flexibility and adhesive characteristics of graphene and devising unique experiments that can teach us more about the nanoscale properties of this amazing material," Bunch said.

Not only does graphene have the highest electrical and thermal conductivity among all materials known, but this "wonder material" has been shown to be the thinnest, stiffest and strongest material in the world, as well as being impermeable to all standard gases. It's newly discovered adhesion properties can now be added to the list of the material's seemingly contradictory qualities, said Bunch.

The CU-Boulder team measured the adhesion energy of graphene sheets, ranging from one to five atomic layers, with a glass substrate, using a pressurized "blister test" to quantify the adhesion between graphene and glass plates.

Adhesion energy describes how "sticky" two things are when placed together. Scotch tape is one example of a material with high adhesion; the gecko lizard, which seemingly defies gravity by scaling up vertical walls using adhesion between its feet and the wall, is another. Adhesion also canplay a detrimental role, as in suspended micromechanical structures where adhesion can cause device failure or prolong the development of a technology, said Bunch.

The CU research, the first direct experimental measurements of the adhesion of graphene nanostructures, showed that so-called "van der Waals forces" -- the sum of the attractive or repulsive forces between molecules -- clamp the graphene samples to the substrates and also hold together the individual graphene sheets in multilayer samples.

The researchers found the adhesion energies between graphene and the glass substrate were several orders of magnitude larger than adhesion energies in typical micromechanical structures, an interaction they described as more liquid-like than solid-like, said Bunch.

The CU-Boulder study was funded primarily by the National Science Foundation and the Defense Advanced Research Projects Agency.

The importance of graphene in the scientific world was illustrated by the 2010 Nobel Prize in physics that honored two scientists at Manchester University in England, Andre K. Geim and Konstantin Novoselov, for producing, isolating, identifying and characterizing graphene.

There is interest in exploiting graphene's incredible mechanical properties to create ultrathin membranes for energy-efficient separations such as those needed for natural gas processing or water purification, while graphene's superior electrical properties promise to revolutionize the microelectronics industry, said Bunch.

In all of these applications, including any large-scale graphene manufacturing, the interaction that graphene has with a surface is of critical importance and a scientific understanding will help push the technology forward, he said.

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The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by University of Colorado at Boulder.

Journal Reference:

Steven P. Koenig, Narasimha G. Boddeti, Martin L. Dunn, J. Scott Bunch. Ultrastrong adhesion of graphene membranes. Nature Nanotechnology, 2011; DOI: 10.1038/nnano.2011.123

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How graphene's electrical properties can be tuned

ScienceDaily (Sep. 26, 2011) — An accidental discovery in a physicist's laboratory at the University of California, Riverside provides a unique route for tuning the electrical properties of graphene, nature's thinnest elastic material. This route holds great promise for replacing silicon with graphene in the microchip industry.

The researchers found that stacking up three layers of graphene, like pancakes, significantly modifies the material's electrical properties. When they fabricated trilayer graphene in the lab and measured its conductance, they found, to their surprise, that depending on how the layers were stacked some of the trilayer graphene devices were conducting while others were insulating.

"What we stumbled upon is a simple and convenient 'knob' for tuning graphene sheets' electrical properties," said Jeanie Lau, an associate professor of physics and astronomy, whose lab made the serendipitous finding.

Study results appeared online Sept. 25 in Nature Physics.

Graphene is a one-atom thick sheet of carbon atoms arranged in hexagonal rings. Bearing excellent material properties, such as high current-carrying capacity and thermal conductivity, this "wonder material" is ideally suited for creating components for semiconductor circuits and computers.

Because of the planar and chicken wire-like structure of graphene, its sheets lend themselves well to stacking in what is called 'Bernal stacking,' the stacking fashion of graphene sheets.

In a Bernal-stacked bilayer, one corner of the hexagons of the second sheet is located above the center of the hexagons of the bottom sheet. In Bernal-stacked trilayer (ABA), the top (third) sheet is exactly on top of the lowest sheet. In rhombohedral-stacked (ABC) trilayer, the top sheet is shifted by the distance of an atom, so that the top (third) sheet and the lowest sheet form a Bernal stacking as well.

"The most stable form of trilayer graphene is ABA, which behaves like a metal," Lau explained. "Amazingly, if we simply shift the entire topmost layer by the distance of a single atom, the trilayer -- now with ABC or rhombohedral stacking -- becomes insulating. Why this happens is not clear as yet. It could be induced by electronic interactions. We eagerly await an explanation from theorists!"

Her lab used Raman spectroscopy to examine the graphene devices' stacking orders. Next the lab plans to investigate the nature of the insulating state in ABC-stacked graphene. In this kind of stacked graphene, they also plan to study the band gap -- a range in energy, critical for digital applications, in which no electrons can exist.

"The presence of the gap in ABC-stacked graphene that arises, we believe, from enhanced electronic interactions is interesting since it is not expected from theoretical calculations," Lau said. "Understanding this gap is particularly important for the major challenge of band gap engineering in graphene electronics."

Besides graphene, Lau studies nanowires and carbon nanotubes. Her research has helped physicists gain fundamental understanding of how atoms and electrons behave when they are ruled by quantum mechanics. Her lab studies novel electrical properties that arise from the quantum confinement of atoms and charges to nanoscale systems. Her research team has shown that graphene can act as an atomic-scale billiard table, with electric charges acting as billiard balls.

Her other research interests include superconductivity, thermal management and electronic transport in nanostructures, and engineering new classes of nanoscale devices.

An educational component of Lau's research effort is the active involvement of high school, undergraduate, and graduate students, especially minority and women, in her cutting-edge research, taking advantage of the ethnic diversity of UCR's student population and local communities. She is a founding faculty member of the UCR Undergraduate Research Journal. She also organized a "Women in Physics" lunch group that provides a friendly platform for female students, postdocs and faculty members to interact.

After receiving her bachelor's degree in physics from the University of Chicago in 1994, Lau proceeded to Harvard University from where she received her master's and doctoral degrees in physics in 1997 and 2001, respectively. She joined UCR in 2004, after an appointment as a research associate in the Hewlett-Packard Laboratory.

Lau's awards and honors include a Presidential Early Career Award for Scientists and Engineers, 2009; a National Science Foundation CAREER Award, 2008; the Richter Fellowship for Undergraduate Research, 1992; a David W. Grainger Senior Scholarship, 1993; and a Robert T. Poe Faculty Development Grant from the Chinese-American Faculty Association of Southern California, 2007. She has published more than 60 research articles in peer-reviewed journals.

Lau, a member of UCR's Center for Nanoscale Science and Engineering, was joined in the research by W. Bao (the first author of the research paper), L. Jing, J. Velasco Jr., Y. Lee, G. Liu, D. Tran and M. Bockrath at UCR; B. Stanley at Caltech; M. Aykol and S. B. Cronin at the University of Southern California; D. Smirnov at the National High Magnetic Field Laboratory, Fla.; M. Koshino at Tohoku University, Japan; and E. McCann at Lancaster University, United Kingdom.

The research was funded by grants from the National Science Foundation, Office of Naval Research, and the Focus Center for Functional Engineered Nano Architectonics.

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The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by University of California - Riverside.

Journal Reference:

W. Bao, L. Jing, J. Velasco, Y. Lee, G. Liu, D. Tran, B. Standley, M. Aykol, S. B. Cronin, D. Smirnov, M. Koshino, E. McCann, M. Bockrath, C. N. Lau. Stacking-dependent band gap and quantum transport in trilayer graphene. Nature Physics, 2011; DOI: 10.1038/nphys2103

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